I am a Ph.D. candidate in Electrical Engineering at Stanford University. Currently, I am working on the MBE growth and fabrication of dilute-nitride optoelectronic devices.
Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP, R. Kudrawiec, T. Sarmiento, P. Poloczek, J. Misiewicz, and J. S. Harris, J. Appl. Phys. 107, 043523, 2010
GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers, T. Sarmiento, H. P. Bae, T. D. O'Sullivan, and J. S. Harris, Electron. Lett. 45, 978, 2009
Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers, J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmiento, and J. S. Harri, Appl. Phys. Lett. 95, 231104, 2009
Electrically controlled modulation in a photonic crystal nanocavity, D. Englund, B. Ellis, E. Edwards, T. Sarmiento, J. S. Harris, D. A. B. Miller, and J. Vuckovic, Opt. Express 17, 15409, 2009
Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition, R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, Appl. Phys. Lett. 94, 031903, 2009.
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications, J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, T. Gugov, Phys. Stat. Sol. (b) 244, 2707, 2007.
Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers, H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, Appl. Phys. Lett. 90, 231119, 2007.
Ilya Fushman
